Investigation of focused ion beam induced damage in single crystal diamond tools
Creators
- 1. Center for Precision Engineering, Harbin Institute of Technology, Harbin 150001 (China)
- 2. Centre for Precision Manufacturing, Department of Design, Manufacture & Engineering Management, University of Strathclyde, Glasgow G1 1XQ (United Kingdom)
Description
Highlights: • The FIB-induced damage layer should be paid enough attention when shaping the cutting edges of nanoscale diamond tools. • During FIB processing cutting tools made of natural single crystal diamond, the Ga+ collision will create a damage layer around tool tips. • The thicknesses of damaged layer and the level for amorphization of diamond significantly increase with beam energy. • The FIB-induced doping and defects during tool fabrication are responsible for the early detection of tool wear of nanoscale diamond tools. - Abstract: In this work, transmission electron microscope (TEM) measurements and molecular dynamics (MD) simulations were carried out to characterise the focused ion beam (FIB) induced damage layer in a single crystal diamond tool under different FIB processing voltages. The results obtained from the experiments and the simulations are in good agreement. The results indicate that during FIB processing cutting tools made of natural single crystal diamond, the energetic Ga+ collision will create an impulse-dependent damage layer at the irradiated surface. For the tested beam voltages in a typical FIB system (from 8 kV to 30 kV), the thicknesses of the damaged layers formed on a diamond tool surface increased from 11.5 nm to 27.6 nm. The dynamic damage process of FIB irradiation and ion–solid interactions physics leading to processing defects in FIB milling were emulated by MD simulations. The research findings from this study provide the in-depth understanding of the wear of nanoscale multi-tip diamond tools considering the FIB irradiation induced doping and defects during the tool fabrication process
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2015.04.120Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2015.04.120;
- PII
- S0169-4332(15)00970-8;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 347
- Journal Page Range
- p. 727-735
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47038004
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMORPHOUS STATE; CUTTING TOOLS; DEFECTS; DETECTION; DIAMONDS; GALLIUM IONS; INTERACTIONS; ION BEAMS; IRRADIATION; LAYERS; MOLECULAR DYNAMICS METHOD; MONOCRYSTALS; NANOSTRUCTURES; PHYSICAL RADIATION EFFECTS; SIMULATION; SOLIDS; SURFACES; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- BEAMS; CALCULATION METHODS; CARBON; CHARGED PARTICLES; CRYSTALS; ELECTRON MICROSCOPY; ELEMENTS; EQUIPMENT; IONS; MICROSCOPY; MINERALS; NONMETALS; RADIATION EFFECTS; TOOLS
Optional Information
- Copyright
- Copyright (c) 2015 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.