Electronic structure, irreversibility line and magnetoresistance of Cu0.3Bi2Se3 superconductor
Creators
- 1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing (China)
Description
CuxBi2Se3 is a superconductor that is a potential candidate for topological superconductors. We report our laser-based angle-resolved photoemission measurement on the electronic structure of the CuxBi2Se3 superconductor, and a detailed magneto-resistance measurement in both normal and superconducting states. We find that the topological surface state of the pristine Bi2Se3 topological insulator remains robust after the Cu-intercalation, while the Dirac cone location moves downward due to electron doping. Detailed measurements on the magnetic field-dependence of the resistance in the superconducting state establishes an irreversibility line and gives a value of the upper critical field at zero temperature of ∼4000 Oe for the Cu0.3Bi2Se3 superconductor with a middle point Tc of 1.9 K. The relation between the upper critical field Hc2 and temperature T is different from the usual scaling relation found in cuprates and in other kinds of superconductors. Small positive magneto-resistance is observed in Cu0.3Bi2Se3 superconductors up to room temperature. These observations provide useful information for further study of this possible candidate for topological superconductors. (authors)
Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 32
- Journal Issue
- 6
- Journal Page Range
- [5 p.]
- ISSN
- 0256-307X
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 51120635
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BISMUTH SELENIDES; COPPER COMPOUNDS; CRITICAL FIELD; DATA; ELECTRONIC STRUCTURE; ELECTRONS; LASERS; MAGNETORESISTANCE; PHOTOEMISSION; POTENTIALS; SUPERCONDUCTORS; TEMPERATURE RANGE 0273-0400 K; TOPOLOGY
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; EMISSION; FERMIONS; INFORMATION; LEPTONS; MAGNETIC FIELDS; MATHEMATICS; PHYSICAL PROPERTIES; SECONDARY EMISSION; SELENIDES; SELENIUM COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- 4 figs., 53 refs.; http://dx.doi.org/10.1088/0256-307X/32/6/067401