Published 1995 | Version v1
Miscellaneous Open

Correlation of size and photoluminescence for ion-implanted Ge nanocrystals in SiO2 : Implications for luminescence mechanisms

Creators

  • 1. California Institute of Technology, Pasadena (United States)
  • 2. FOM Institute for Atomic and Molecular Physics, Amsterdam (Netherlands)

Description

Short communication

Files

28072047.pdf

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Part of:
Ninth international conference on ion beam modification of materials. Book of abstracts

Additional details

Publishing Information

Publisher
Accademic Press.
Imprint Title
Ninth international conference on ion beam modification of materials. Book of abstracts
Imprint Pagination
452 p.
Journal Page Range
p. 7095.
Report number
INIS-AU--0004

Conference

Title
9. international conference on ion beam modification of materials.
Acronym
IBMM'95
Dates
5-10 Feb 1995.
Place
Canberra (Australia).

INIS

Country of Publication
Australia
Country of Input or Organization
Australia
INIS RN
28072047
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
CARRIERS; COMPUTERIZED SIMULATION; ELECTRON MICROSCOPY; GERMANIUM; ION IMPLANTATION; PARTICLE SIZE; PHOTOLUMINESCENCE; SILICON OXIDES
Descriptors DEC
CHALCOGENIDES; ELEMENTS; EMISSION; LUMINESCENCE; METALS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SILICON COMPOUNDS; SIMULATION; SIZE

Optional Information