Published March 9, 1982 | Version v1
Patent

Method of manufacturing an infra-red detector device

Description

In the manufacture of an infra-red detector device, at least a portion of a surface of a body of mercury cadmium telluride is subjected to a conversion treatment to produce a surface layer, after which a heating step is performed. The present invention involves a simple and reproducible process for forming in the body a p-n junction of sufficiently good quality for such a detector which can be of a planar form so as to facilitate the formation of the detector element arrays in the body and the provision of contacts to the detector elements

Availability note (English)

U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50.

Additional details

Additional titles

Augmented title (English)
Patent

Publishing Information

Imprint Pagination
v p.
IPC:
Int. Cl.H01L 31/18.
IPC
Int. Cl.H01L 31/18.
Patent number
US patent document 4,318,217/A/

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
14725255
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
CADMIUM; FABRICATION; HEATING; INFRARED RADIATION; LAYERS; MERCURY; P-N JUNCTIONS; PHOTOVOLTAIC CELLS; RADIATION DETECTORS; SURFACES; TELLURIDES
Descriptors DEC
CHALCOGENIDES; DIRECT ENERGY CONVERTERS; ELECTROMAGNETIC RADIATION; ELEMENTS; MEASURING INSTRUMENTS; METALS; PHOTOELECTRIC CELLS; RADIATIONS; SEMICONDUCTOR JUNCTIONS; TELLURIUM COMPOUNDS

Optional Information

Notes
PAT-APPL-178645.