Published February 2012 | Version v1
Journal article

Stability and on-off chaotic states mechanisms of semiconductor lasers with optical injection on the new modified rate equation model

  • 1. Department of Physics, Faculty of Science, University of Yaounde 1, PO Box 812, Yaounde (Cameroon)

Description

In this paper, we consider the modified single-mode rate equations for a semiconductor laser (SCL) subjected to optical injection. In addition to the well-known control parameters of this kind of system, a new control one, namely the effective gain coefficient (EGC), interferes especially with its nonlinear dynamics. A stability analysis reveals that the unstable locking regions are drastically influenced by EGC, and this can contribute towards improving its accuracy. The generation and destruction of chaotic states through the period-doubling bifurcation route lead to the strengthening of these states. Furthermore, various phenomena such as intermittency bifurcation around the period windows, the general behavior of the SCL systems at the onset of the quasi-periodic regime near the coherence collapse regime and the nonlinear dynamic route sequences to the limit value of the EGC were studied with regard to the impact of this new control parameter.

Availability note (English)

Available from http://dx.doi.org/10.1088/0031-8949/85/02/025404

Additional details

Publishing Information

Journal Title
Physica Scripta (Online)
Journal Volume
85
Journal Issue
2
Journal Page Range
[9 p.]
ISSN
1402-4896

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44005754
Subject category
S97: MATHEMATICAL METHODS AND COMPUTING; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ACCURACY; BIFURCATION; CHAOS THEORY; INJECTION; NONLINEAR PROBLEMS; PERIODICITY; REACTION KINETICS; SEMICONDUCTOR LASERS; STABILITY
Descriptors DEC
INTAKE; KINETICS; LASERS; MATHEMATICS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS; VARIATIONS