Effect of triangular vacancy defect on thermal conductivity and thermal rectification in graphene nanoribbons
- 1. Laboratory of Advanced Manufacturing and Reliability for MEMS/NEMS/OEDS, Jiangsu University, Zhenjiang 212013 (China)
- 2. School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013 (China)
- 3. School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)
Description
We investigate the thermal transport properties of armchair graphene nanoribbons (AGNRs) possessing various sizes of triangular vacancy defect within a temperature range of 200–600 K by using classical molecular dynamics simulation. The results show that the thermal conductivities of the graphene nanoribbons decrease with increasing sizes of triangular vacancy defects in both directions across the whole temperature range tested, and the presence of the defect can decrease the thermal conductivity by more than 40% as the number of removed cluster atoms is increased to 25 (1.56% for vacancy concentration) owing to the effect of phonon–defect scattering. In the meantime, we find the thermal conductivity of defective graphene nanoribbons is insensitive to the temperature change at higher vacancy concentrations. Furthermore, the dependence of temperatures and various sizes of triangular vacancy defect for the thermal rectification ration are also detected. This work implies a possible route to achieve thermal rectifier for 2D materials by defect engineering
Availability note (English)
Available from http://dx.doi.org/10.1016/j.physleta.2013.05.058Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2013.05.058;
- PII
- S0375-9601(13)00575-6;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 377
- Journal Issue
- 34-36
- Journal Page Range
- p. 2141-2146
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46008962
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ABUNDANCE; ATOMS; CONCENTRATION RATIO; DEFECTS; DESIGN; GRAPHENE; MOLECULAR DYNAMICS METHOD; NANOSTRUCTURES; PHONONS; RECTIFIERS; SCATTERING; SIMULATION; TEMPERATURE RANGE 0065-0273 K; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THERMAL CONDUCTIVITY; VACANCIES
- Descriptors DEC
- CALCULATION METHODS; CARBON; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; NONMETALS; PHYSICAL PROPERTIES; POINT DEFECTS; QUASI PARTICLES; TEMPERATURE RANGE; THERMODYNAMIC PROPERTIES
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.