Rearrangement of defects in silicon under the action of subthreshold energy electrons

A study was made on the effect of silicon p+-n diode irradiation by 15-30 keV electrons on spectra of nonstationary spectroscopy of deep levels (NSDL) of diodes. It was revealed that irradiation lead to transformation of NSDL spectra in crystals, containing defect clusters. Correlation of depth of p-n junction occurrence and depth of electron penetration into crystal shows, that revealed reconstruction of defects is conditioned by secondary electrons, diffusing to p-n junction. Recombination-stimulated mechanism of defect reconstruction is proposed. Transformation of NSDL spectra was not observed in crystals, containing the point defects only