InAs/InP QDs grown by selective MOVPE growth using double-cap procedure for broadband LED improved p-cladding layer

More than 400nm broadband luminescence was obtained from 3 layered InAs/InP QDs array waveguides. InAs QDs were grown by Stranski-Krastanov grown mode using selective MOVPE growth and double cap procedure. The selective MOVPE was performed using 16 stripe mask array with a wide mask at one side of the array. The heights of the QDs were controlled vertically by changing the first-cap layer thickness during the double-cap procedure. Furthermore, we have tried to control the emission energy of QDs by changing the Ga composition of GaxIn1-xAs buffer layer under the QDs. By using these techniques, we have fabricated the broadband emission devices. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)