Published 2004 | Version v1
Miscellaneous Open

New modified source of hydrogen ions for proton implantation into semiconducting plates for purpose of multilayer structure obtaining

  • 1. Moskovskij Inzhenerno-Fizicheskij Inst. (Gosudarstvennyj Univ.), Moscow (Russian Federation)
  • 2. Moskovskij Ehlektronnoj Tekhniki (Tekhnicheskij Univ.), Moscow (Russian Federation)
  • 3. FGUP GNTs RF Inst. Teoreticheskoj i Ehksperimental'noj Fiziki, Moscow (Russian Federation)

Description

no abstract available

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Part of:
Summaries of reports of the XXXIV International conference on physics of charged particle-crystal interactions

Additional details

Additional titles

Original title (Russian)
Новый модифицированный источник водорода для имплантации протонов в полупроводниковые пластины с целью создания многослойных структур

Publishing Information

Publisher
Izdatel'stvo UNTs DO
Imprint Place
Moscow (Russian Federation)
Imprint Title
Summaries of reports of the XXXIV International conference on physics of charged particle-crystal interactions
Imprint Pagination
168 p.
Journal Page Range
p. 132
Report number
INIS-RU--491

Conference

Title
34. International conference on physics of charged particle-crystal interactions
Original Conference Title
XXXIV mezhdunarodnaya konferentsiya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
Dates
31 May - 2 Jun 2004
Place
Moscow (Russian Federation)

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
36107240
Subject category
S43: PARTICLE ACCELERATORS;
Resource subtype / Literary indicator
No Abstract, Conference
Descriptors DEI
ATOMIC IONS; HYDROGEN IONS; ION IMPLANTATION; ION SOURCES; LINEAR ACCELERATORS; PERFORMANCE; SILICON
Descriptors DEC
ACCELERATORS; CHARGED PARTICLES; ELEMENTS; IONS; SEMIMETALS

Optional Information

Notes
2 refs. Imprint:Tezisy dokladov XXXIV mezhdunarodnoj konferentsii po fizike vzaimodejstviya zaryazhennykh chastits s kristallami