Published October 6, 2008
| Version v1
Journal article
Charging effect of Al2O3 thin films containing Al nanocrystals
Creators
- 1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan, 610054 (China)
- 2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
- 3. Center for Composite Materials, School of Astronautics, Harbin Institute of Technology, P.O. Box 3010, Harbin 150080 (China)
- 4. School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
- 5. Department of Physics, University of Hong Kong (Hong Kong)
Description
In this work, Al2O3 thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al2O3 thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al
Additional details
Identifiers
- DOI
- 10.1063/1.2994695;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 93
- Journal Issue
- 14
- Journal Page Range
- p. 142106-142106.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40051020
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALUMINIUM; ALUMINIUM OXIDES; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRONS; HOLES; NANOSTRUCTURES; RADIOWAVE RADIATION; SEMICONDUCTOR MATERIALS; SPUTTERING; SUBSTRATES; THIN FILMS; TRAPPING
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; FILMS; LEPTONS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RADIATIONS
Optional Information
- Notes
- (c) 2008 American Institute of Physics