Phase imaging and atomic-resolution imaging by electron diffractive imaging
- 1. Osaka University, Research Center for Ultra-High Voltage Electron Microscopy, Ibaraki, Osaka (Japan)
- 2. JEOL Ltd., Akishima, Tokyo (Japan)
- 3. Osaka University, Department of Electronic Engineering, Suita, Osaka (Japan)
- 4. Nagoya University, Department of Crystalline Materials Science, Nagoya, Aichi (Japan)
- 5. Furukawa Electric Co., Ltd., Yokohama, Kanagawa (Japan)
Description
This article reviews diffractive imaging using electron beams, particularly the approach using the selector aperture in a transmission electron microscope (TEM). It proposes experimental setups and reconstruction algorithms suitable for the atomic-resolution mode and the medium-resolution mode. In the medium-resolution mode, the phase distribution of a wave field transmitted through a sample is obtained across a field of view of more than 100 nm with a phase accuracy of 0.1-0.2 rad. Through the phase imaging, a thickness map of the sample and an electrostatic potential map in/around the sample are visualized. In the atomic-resolution mode, its high-resolution ability is confirmed to be better than that of aberration-corrected TEM imaging based on experiments and theory, in which this property is attributed to the lack of direct influence of objective lens chromatic aberration. (author)
Availability note (English)
Available from https://doi.org/10.7567/1347-4065/ab50d7Additional details
Identifiers
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics (Online)
- Journal Volume
- 58
- Journal Issue
- 12
- Journal Page Range
- p. 120502.1-120502.14
- ISSN
- 1347-4065
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 51065950
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CHROMATIC ABERRATIONS; CRYSTAL STRUCTURE; DATA VISUALIZATION; ELECTRIC FIELDS; ELECTRON DIFFRACTION; ELECTROSTATIC LENSES; IMAGE PROCESSING; IMAGES; PHASE SHIFT; P-N JUNCTIONS; SILICON; SPATIAL RESOLUTION; THICKNESS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- COHERENT SCATTERING; DATA ANALYSIS; DATA PROCESSING; DIFFRACTION; DIMENSIONS; ELECTRON MICROSCOPY; ELEMENTS; LENSES; MICROSCOPY; PROCESSING; RESOLUTION; SCATTERING; SEMICONDUCTOR JUNCTIONS; SEMIMETALS
Optional Information
- Notes
- 61 refs., 13 figs., 1 tab.