Defect formation in p-Si with Yb impurity

The effect of Yb impurity atoms on the behaviour of the main electrophysical parameters of p-Si under #betta#- and electron irradiations is investigated. It is shown that Yb atoms form impurity cluste-- rs with a characteristic size <= 0.5 m, when the concentration of Yb atoms achieves approximately 1014 cm-3, without changing the initial electrical parameters of Si. It is found that by introducing the Yb impurity, one can decrease the rate of carrier removal and slow down the lifetime degradation of minority carriers under #betta#- and electron irradiations. The Yb clusters are supposed to be the sinks for primary radiation defects. The anomalous temperature dependence of the Hall mobility in p-Si with Yb impurity atoms is observed at doses >= 1017 el/cm2