Investigation of structural perfection of semiconductor crystals and heterostructures by means of synchrotron radiation

Experimental conditions are studied of producing topograms in case of the Laue method with a synchrotron radiation beam being employed. The Laue photographs are notable for a high resolution comparable with that of the Lange topograms as well as a low fluorescent background level. Topograms of the composite systems have been produced for the first time. The synchrotron radiation makes it possible to produce at the same time topograms from the film and substrate of the heteroepitaxial structure which facilitates interpretation of defective structures. Resolution of the topograms produced through synchrotron radiation is compared with that of the Lange topograms