Published August 1, 2004 | Version v1
Journal article

Neutron irradiation effects on high-crystallinity and near-stoichiometry SiC fibers and their composites

Description

Key characteristics required for the development of fusion-grade SiC/SiC composites are high-crystallinity and near-stoichiometry. To identify the primary mechanisms of degradation caused by neutron irradiation, the radiation behavior of the constituent SiC fibers needs to be examined. In this study, single filament tensile tests were conducted after neutron irradiation on a recently developed highly-crystalline and near-stoichiometric SiC fiber; Hi-NicalonTM Type-S. Hi-NicalonTM Type-S fiber exhibited excellent strength retention up to 7.7 dpa independent of irradiation temperature up to 800 deg. C. The radiation stability of the Hi-NicalonTM Type-S fiber directly contributed to the excellent radiation performance in composites made with this fiber. The observed 14-20% decrease of elastic modulus due to neutron irradiation of Hi-NicalonTM Type-S fiber had a minor effect on composite strength

Additional details

Identifiers

DOI
10.1016/j.jnucmat.2004.04.114;
PII
S0022311504002570;

Publishing Information

Journal Title
Journal of Nuclear Materials
Journal Volume
329-333
Journal Issue
1
Journal Page Range
p. 544-548
ISSN
0022-3115
CODEN
JNUMAM

Conference

Title
11. International conference on fusion reactor materials
Acronym
ICFRM-11
Dates
7-12 Dec 2003
Place
Kyoto (Japan)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36030045
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ATOMIC DISPLACEMENTS; FIBERS; FILAMENTS; IRRADIATION; NEUTRON BEAMS; PERFORMANCE; RETENTION; SILICON CARBIDES; STABILITY; STOICHIOMETRY; TEMPERATURE RANGE 1000-4000 K; THERMONUCLEAR REACTOR MATERIALS
Descriptors DEC
BEAMS; CARBIDES; CARBON COMPOUNDS; MATERIALS; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL RADIATION EFFECTS; RADIATION EFFECTS; SILICON COMPOUNDS; TEMPERATURE RANGE

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.