Published October 2001
| Version v1
Journal article
Scanning tunneling microscopy study of the c(4x4) structure formation in the sub-monolayer Sb/Si(100) system
- 1. Osaka Univ., Suita (Japan). Faculty of Engineering
- 2. Institute of Automation and Control Processes, Vladivostok (Russian Federation)
Description
Upon Sb desorption from a Sb-saturated Si(100) surface, the c(4x4) structure formed at about 0.25 monolayer Sb coverage. The c(4x4) reconstruction has been found to develop best when the surface is slightly contaminated, plausibly, by carbon. The Si(100)-c(4x4)-Sb surface shows up in the high-resolution filled state scanning tunneling microscopy images as being very similar to that of the recently reported c(4x4)-Si reconstruction. Here the main features of the Si(100)-c(4x4)-Sb structure are identified and the possible atomic arrangement is discussed. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes and Review Papers
- Journal Volume
- 40
- Journal Issue
- 10
- Journal Page Range
- p. 6069-6072
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 33002992
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- ANNEALING; ANTIMONY; DEPOSITION; EXPERIMENTAL DATA; INTERFACES; SCANNING ELECTRON MICROSCOPY; SILICON; STRUCTURE FACTORS; SURFACES; TUNNEL EFFECT
- Descriptors DEC
- DATA; ELECTRON MICROSCOPY; ELEMENTS; HEAT TREATMENTS; INFORMATION; METALS; MICROSCOPY; NUMERICAL DATA; SEMIMETALS
Optional Information
- Notes
- 31 refs., 5 figs.