X-ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during deposition

X-ray photoelectron spectroscopy analysis was performed on ion beam sputter deposited films of indium tin oxide as a function of O2 partial pressure during deposition. The oxygen partial pressure was varied over the range of 2.5 x 10-6--4.0 x 10-5 Torr. Changes in composition as well as in the deconvoluted In 3d5/sub //2, Sn 3d5/sub //2, and O 1s core level spectra were observed and correlated with the variation of the oxygen partial pressure during deposition. Results show that the films become increasingly stoichiometric as P/sub =/ is increased and that the excess oxygen introduced during deposition is bound predominantly to the Sn and has little or no effect on the In--O bonding