Published December 1987
| Version v1
Journal article
A comparison of positive charge generation in high field stressing and ionizing radiation on mos structures
Creators
- 1. The Pennsylvania State Univ., Dept. of Engineering Science and Mechanics, University Park, PA 16802 (USA)
Description
The authors compare the effects of ionizing radiation and high field stressing on Metal-Oxide-Silicon oxides. Using electron spin resonance, they compare the point defects responsible for the positive charge generated by ionizing radiation and high field stressing. They find the two processes to be different in that the positive charge generated by ionizing radiation is almost entirely due to E' centers in the oxide; however, less than half the positive charge generated by high field stressing can be accounted for by E' centers
Additional details
Publishing Information
- Journal Title
- IEEE Trans. Nucl. Sci.
- Journal Volume
- NS-34
- Journal Issue
- 6
- Series
- IEEE Trans. Nucl. Sci.
- Journal Page Range
- 1355-1358
- ISSN
- 0018-9499
- CODEN
- IETNA
Conference
- Title
- Annual conference on nuclear and space radiation effects.
- Dates
- 28-31 Jul 1987.
- Place
- Snowmass Village, CO (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 19076000
- Subject category
- S36: MATERIALS SCIENCE; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHARGED-PARTICLE PRECIPITATION; ELECTRON SPIN RESONANCE; IONIZING RADIATIONS; METALS; MOS TRANSISTORS; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SILICON OXIDES; STRESS INTENSITY FACTORS
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; MAGNETIC RESONANCE; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; RESONANCE; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-8707112--.