Published May 1985
| Version v1
Journal article
Si-beam radiation cleaning in molecular-beam epitaxy
- 1. Matsushita Electric Industrial Co. Ltd., Moriguchi, Osaka (Japan). Central Research Lab.
Description
A new surface-cleaning process for Si-MBE, termed Si-beam radiation cleaning (Rad clean), and a model of the cleaning process have been examined. Epitaxial Si layers of high quality have been obtained as a result of the formation of an inactive, very clean natual oxide, removal of this oxide together with contaminants slightly adsorbed on it, and dispersion of remaining contaminants without their developing into defect nuclei. Epitaxial Si layers with etch pit densities of less than 103/cm2 have reproducibly been obtained by carrying out growth at 500 0C following the Rad clean process at 800 0C for 2 min. (author)
Additional details
Publishing Information
- Journal Title
- Jpn. J. Appl. Phys., Part 1
- Journal Volume
- 24
- Journal Issue
- 5
- Series
- Jpn. J. Appl. Phys., Part 1.
- Journal Page Range
- 564-567
- CODEN
- JAPND
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 17046033
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- CRYSTAL DEFECTS; DEFECTS; DEPOSITION; EPITAXY; ETCHING; EXPERIMENTAL DATA; IRRADIATION; MILLI AMP BEAM CURRENTS; MOLECULAR BEAMS; SILICON OXIDES; SILICON 28 BEAMS; SURFACE CLEANING; TEMPERATURE DEPENDENCE
- Descriptors DEC
- BEAM CURRENTS; BEAMS; CHALCOGENIDES; CLEANING; CRYSTAL STRUCTURE; CURRENTS; DATA; INFORMATION; ION BEAMS; NUMERICAL DATA; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SURFACE FINISHING