Published 1989
| Version v1
Book
The origin and effects of carrier leakage in GaInAsP/InP lasers
Description
This paper discusses the characteristics of carrier leakage and the effects of carrier leakage on the lasing threshold and its temperature dependence in 1.3 μm wavelength GaInAsP/InP double heterojunction lasers which have been calculated and compared with experimental results. The authors state that the agreement between measured and theoretical results provides strong evidence that carrier leakage in such devices is related to the Auger recombination processes
Additional details
Publishing Information
- Publisher
- Society of Photo-Optical Instrumentation Engineers.
- Imprint Place
- Bellingham, WA (USA)
- Imprint Title
- Proceedings of the first international conference on indium phosphide and related materials for advanced electronic and optical devices
- Imprint Pagination
- 649 p.
- Journal Page Range
- p. 424-427.
Conference
- Title
- 1. international conference on indium phosphide and related materials for advanced electronic and optical devices.
- Dates
- 20-22 Mar 1989.
- Place
- Norman, OK (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 22002896
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALGORITHMS; AUGER EFFECT; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LEAKAGE CURRENT; MATERIALS; RECOMBINATION; SEMICONDUCTOR LASERS; STIMULATED EMISSION; TEMPERATURE DEPENDENCE
- Descriptors DEC
- AMPLIFIERS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; EMISSION; ENERGY-LEVEL TRANSITIONS; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LASERS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS; SOLID STATE LASERS
Optional Information
- Secondary number(s)
- CONF-8903157--.