Published April 15, 1981
| Version v1
Journal article
Ion implantation in insulators
Creators
- 1. Sussex Univ., Brighton (UK). School of Mathematical and Physical Sciences
Description
The modification of insulating materials by ion implantation is developing in several areas. In many cases the property changes just parallel those observed in semiconductors, but in at least one new area, namely integrated optics, the use of the ion beams has distinct advantages for the control of the properties needed for waveguides and other optical devices. Ion beams also fill a second function as diagnostic tools in the production and analysis of defect structures. A selection of experiments using luminescence and optical absorption are mentioned. (orig.)
Additional details
Publishing Information
- Journal Title
- Nucl. Instrum. Methods
- Journal Volume
- 182/183
- Journal Issue
- pt.2
- Series
- Nucl. Instrum. Methods.
- Journal Page Range
- 727-732
- ISSN
- 0029-554X
Conference
- Title
- 2. international conference on ion beam modification of materials.
- Dates
- 14 - 18 Jul 1980.
- Place
- Albany, NY, USA.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 12630621
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Progress Report
- Descriptors DEI
- ABSORPTION; ELECTRICAL INSULATORS; ELECTRON SPIN RESONANCE; ION BEAMS; ION IMPLANTATION; LUMINESCENCE; MATERIALS TESTING; WAVEGUIDES
- Descriptors DEC
- BEAMS; ELECTRICAL EQUIPMENT; MAGNETIC RESONANCE; RESONANCE; TESTING