Published April 15, 1981 | Version v1
Journal article

Ion implantation in insulators

  • 1. Sussex Univ., Brighton (UK). School of Mathematical and Physical Sciences

Description

The modification of insulating materials by ion implantation is developing in several areas. In many cases the property changes just parallel those observed in semiconductors, but in at least one new area, namely integrated optics, the use of the ion beams has distinct advantages for the control of the properties needed for waveguides and other optical devices. Ion beams also fill a second function as diagnostic tools in the production and analysis of defect structures. A selection of experiments using luminescence and optical absorption are mentioned. (orig.)

Additional details

Publishing Information

Journal Title
Nucl. Instrum. Methods
Journal Volume
182/183
Journal Issue
pt.2
Series
Nucl. Instrum. Methods.
Journal Page Range
727-732
ISSN
0029-554X

Conference

Title
2. international conference on ion beam modification of materials.
Dates
14 - 18 Jul 1980.
Place
Albany, NY, USA.

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
12630621
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Progress Report
Descriptors DEI
ABSORPTION; ELECTRICAL INSULATORS; ELECTRON SPIN RESONANCE; ION BEAMS; ION IMPLANTATION; LUMINESCENCE; MATERIALS TESTING; WAVEGUIDES
Descriptors DEC
BEAMS; ELECTRICAL EQUIPMENT; MAGNETIC RESONANCE; RESONANCE; TESTING