Published April 1974
| Version v1
Journal article
Growth kinetics of the V1 band in some Na slightly doped KBr crystals at 800 K
Creators
- 1. Institut National des Sciences Appliquees (INSA), 69 - Villeurbanne (France). Lab. de Physique de la Matiere
Description
The concentration variations of V1 centers in Na slightly doped KBr formed by electron irradiation at 800 K are explained by assuming that the mobile halogen interstitial can either recombine with vacancies or be trapped by the saturable Na traps, the capture radii of the vacancy and of the Na impurity being supposed of the same order of magnitude. The oscillation strength of the V1 center and the energy necessary to produce a Frenkel pair in KBr at 800 K are then determined. (author)
Additional details
Publishing Information
- Journal Title
- Cryst. Lattice Defects
- Journal Volume
- 5
- Journal Issue
- 2
- Series
- Cryst. Lattice Defects.
- Journal Page Range
- 113-116
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 8293054
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- DOPED MATERIALS; FRENKEL DEFECTS; IMPURITIES; INTERSTITIALS; LOW TEMPERATURE; OSCILLATOR STRENGTHS; PHYSICAL RADIATION EFFECTS; POTASSIUM BROMIDES; RECOMBINATION; SODIUM; TRAPPING; V CENTERS
- Descriptors DEC
- ALKALI METAL COMPOUNDS; ALKALI METALS; BROMIDES; BROMINE COMPOUNDS; COLOR CENTERS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTS; HALIDES; HALOGEN COMPOUNDS; METALS; POINT DEFECTS; POTASSIUM COMPOUNDS; RADIATION EFFECTS; VACANCIES