Influence of germanium content on the current-voltage characteristics of the Si1-x Gex p-n junctions after thermal treatment at 1000 deg.C

Influence of post diffusion thermal treatment on C-V characteristics of Si1-x Gex solid solution p-n junctions is investigated. The influence of various factors (such as an impurity concentration gradient in p-n region, fluctuation of Ge content in crystal) on post diffusion processes are considered. It is established that influence of post diffusion thermal processing is small in samples with large contents of Ge because of small gradient of impurity concentration. The post diffusion thermal treatment is shown can be used for stabilization and improvement of the Si1-x Gex alloy p-n junction characteristics. (author)