Polarization dependence of photoluminescence from InAs quantum dots grown on InP(311)B substrates using digital embedding method

Hybrid structures of InGaAs/InAlAs two-dimensional quantum well superlattices and self-assembled InAs quantum dots (QD) are fabricated on an InP(311)B substrate by the digital embedding method. Samples, in which the period of the superlattice is changed, are evaluated by atomic force microscope and polarized photoluminescence (PL). The intensity of PL polarized in the [-233] direction is found to be higher than that in the [01-1] direction, which is affected by the structural anisotropy of InAs QDs and crystal anisotropy of the (311) surface. The polarization degree can be controlled by changing the period of the superlattice. These results indicate that the thickness of the InAlAs barrier of the superlattice plays an important role for controlling optical properties of InAs QDs embedded in superlattices. (copyright 2018 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)