Published May 1, 2016
| Version v1
Journal article
Chemical state of Ag in Conducting Bridge Random Access Memory cells: a depth resolved X-ray Absorption Spectroscopy investigation
- 1. CNR-IOM-OGG c/o ESRF, LISA CRG, 71 Avenue des Martyrs, Grenoble (France)
- 2. Univ. Grenoble Alpes, CEA, LETI, MINATEC Campus, 17 Rue des Martyrs, Grenoble (France)
Description
Conducting Bridge Random Access Memories (CBRAM) are a promising substitute for FLASH technology but problems with limited retention of the low resistance ON state still hamper their massive deployment. Depth resolved X-ray Absorption Spectroscopy has been used to describe the chemical state of the atoms of the active electrode (in this case Ag) and to reveal the role of Sb as stabilizer of the metallic state. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/712/1/012046Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 712
- Journal Issue
- 1
- Journal Page Range
- [4 p.]
- ISSN
- 1742-6596
Conference
- Title
- 16. international conference on X-ray absorption fine structure
- Acronym
- XAFS16
- Dates
- 23-28 Aug 2015
- Place
- Karlsruhe (Germany)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49018920
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTROSCOPY; ANTIMONY; ATOMS; CHEMICAL STATE; ELECTRODES; RANDOMNESS; RETENTION; SILVER; X-RAY SPECTROSCOPY
- Descriptors DEC
- ELEMENTS; METALS; SPECTROSCOPY; TRANSITION ELEMENTS