Kondo effect and structural phase transformations in A4B6 compounds, containing off-central ions of different generation

Effect of peripheral ions of different origin in PbTe1-xSx semiconductor on structural phase transitions (SPT) and Condo effect manifestation in the region lower than Tc are investigated. It is shown that SPT occur due to order-disorder type transformation in non-central atom dipole system which can occur under isovalent doping with ions of minor radius and be generated by local inhomogeneities. Condo effect occurs under current carrier scattering on dipoles linked with non-central ions. AlT<Tc Condo effect and SPT can be suppressed as a result of dipole orientation by electric field