The nature of the transition region formed between dc-bases rf sputtered TiC films and steel substrates

The chemistry and microstructure of the interfacial layer formed between rf bias sputtered TiC films and steel substrates have been investigated as a function of substrate growth conditions using Auger electron spectroscopy and transmission electron microscopy. Chemical information was obtained using point-by-point independent micro-stylus and Auger measurements. A dc bias (Vsub(s)) ranging from 0 to -1000 V was applied to the steel substrate during the initial 5 min of film deposition. It was found that under bias sputtering conditions in the presence of small partial pressures of oxygen, C was preferentially resputtered as oxygen was incorporated. A transition region was thus formed between the steel substrate and the bulk TiC film. Electron diffraction in conjunction with Auger spectroscopy was used to determine the phases present. (Auth.)