Published November 2010
| Version v1
Journal article
Low-field anomaly of the hall effect in disordered two-dimensional systems
- 1. Ural State University (Russian Federation)
- 2. Russian Academy of Sciences, Institute of Metal Physics, Ural Division (Russian Federation)
Description
This study is devoted to investigation of the nonlinear behavior of the Hall resistance in low magnetic fields. When investigating two-dimensional electron gas in single GaAs/InxGa1-xAs/GaAs quantum wells, it is shown that the anomaly of the Hall effect in disordered systems can be described taking into account the second-order quantum corrections to conductivity.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 44
- Journal Issue
- 11
- Journal Page Range
- p. 1430-1434
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43040002
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CORRECTIONS; ELECTRON GAS; GALLIUM ARSENIDES; HALL EFFECT; MAGNETIC FIELDS; NONLINEAR PROBLEMS; QUANTUM WELLS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES
Optional Information
- Copyright
- Copyright (c) 2010 Pleiades Publishing, Ltd.