Molecular light emitting heterojunctions based on fully conjugated heterocyclic aromatic rigid-rod polymer poly-p-phenylenebenzobisthiazole
Creators
- 1. Institute of Materials Science and Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan (China)
Description
Poly-p-phenylenebenzobisthiazole, PBT, is a heterocyclic aromatic polymer having a fully conjugated rigid-rod backbone, excellent stabilities and opto-electronic properties. Multilayer heterojunctions of PBT and conjugated dyes of 3-(2-benzothiazoly)-7-(diethylamino), Coumarin 6 (or C6), and tris-(8-hydroxyquinoline) aluminum, Alq3, were processed using PBT as a hole injection and transport layer. A PBT with an intrinsic viscosity of 18.0 dL/g was dissolved in acids and spun onto an indium-tin-oxide (ITO) substrate followed by coagulation to remove the acid. The low molar dyes were evaporated directly to, or onto the PBT film adhered to the ITO substrate. UV-Vis absorption spectra showed direct band gaps for PBT, C6 and Alq3 at correspondingly 2.6, 2.4, and 2.9 eV. Scanning electron microscope revealed that the heterojunction layer for PBT and the dyes were, respectively, about 23 and 50 nm in thickness. Aluminum was evaporated onto the heterojunction as electron injector for light-emitting diode (LED). By varying the layer ordering and composition, it was evidenced that PBT was a p-type material of high hole mobility; both C6 and Alq3 were n-type materials of a low and a high electron mobility, respectively. Significantly reduced LED threshold voltage and enhanced electroluminescence intensity were resulted from the dyes by introducing a PBT layer showing that the holes were the minority carrier for the heterojunction LEDs
Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2004.08.130;
- PII
- S0040-6090(04)01285-4;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 477
- Journal Issue
- 1-2
- Journal Page Range
- p. 174-181
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 2. international conference on materials for advanced technologies
- Acronym
- ICMAT 03
- Dates
- 7-12 Dec 2003
- Place
- Singapore (Singapore)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37017115
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ABSORPTION SPECTRA; ALUMINIUM COMPLEXES; COUMARIN; DYES; ELECTROLUMINESCENCE; ELECTRON MOBILITY; EV RANGE 01-10; HETEROJUNCTIONS; HOLE MOBILITY; HOLES; INDIUM OXIDES; LAYERS; LIGHT EMITTING DIODES; POLYMERS; SCANNING ELECTRON MICROSCOPY; THIN FILMS; TIN OXIDES
- Descriptors DEC
- ANTICOAGULANTS; CHALCOGENIDES; COMPLEXES; DRUGS; ELECTRON MICROSCOPY; EMISSION; ENERGY RANGE; ESTERS; EV RANGE; FILMS; HEMATOLOGIC AGENTS; HETEROCYCLIC COMPOUNDS; HETEROCYCLIC OXYGEN COMPOUNDS; INDIUM COMPOUNDS; LACTONES; LUMINESCENCE; MICROSCOPY; MOBILITY; ORGANIC COMPOUNDS; ORGANIC OXYGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PARTICLE MOBILITY; PHOTON EMISSION; PYRANS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SEMICONDUCTOR JUNCTIONS; SPECTRA; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.