Published April 22, 2005 | Version v1
Journal article

Molecular light emitting heterojunctions based on fully conjugated heterocyclic aromatic rigid-rod polymer poly-p-phenylenebenzobisthiazole

  • 1. Institute of Materials Science and Engineering, National Sun Yat-sen University, Kaohsiung, Taiwan (China)

Description

Poly-p-phenylenebenzobisthiazole, PBT, is a heterocyclic aromatic polymer having a fully conjugated rigid-rod backbone, excellent stabilities and opto-electronic properties. Multilayer heterojunctions of PBT and conjugated dyes of 3-(2-benzothiazoly)-7-(diethylamino), Coumarin 6 (or C6), and tris-(8-hydroxyquinoline) aluminum, Alq3, were processed using PBT as a hole injection and transport layer. A PBT with an intrinsic viscosity of 18.0 dL/g was dissolved in acids and spun onto an indium-tin-oxide (ITO) substrate followed by coagulation to remove the acid. The low molar dyes were evaporated directly to, or onto the PBT film adhered to the ITO substrate. UV-Vis absorption spectra showed direct band gaps for PBT, C6 and Alq3 at correspondingly 2.6, 2.4, and 2.9 eV. Scanning electron microscope revealed that the heterojunction layer for PBT and the dyes were, respectively, about 23 and 50 nm in thickness. Aluminum was evaporated onto the heterojunction as electron injector for light-emitting diode (LED). By varying the layer ordering and composition, it was evidenced that PBT was a p-type material of high hole mobility; both C6 and Alq3 were n-type materials of a low and a high electron mobility, respectively. Significantly reduced LED threshold voltage and enhanced electroluminescence intensity were resulted from the dyes by introducing a PBT layer showing that the holes were the minority carrier for the heterojunction LEDs

Additional details

Identifiers

DOI
10.1016/j.tsf.2004.08.130;
PII
S0040-6090(04)01285-4;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
477
Journal Issue
1-2
Journal Page Range
p. 174-181
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
2. international conference on materials for advanced technologies
Acronym
ICMAT 03
Dates
7-12 Dec 2003
Place
Singapore (Singapore)

Optional Information

Copyright
Copyright (c) 2004 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.