Published 1983
| Version v1
Journal article
Study on the implantation of recoil atoms in semiconductor substrate
Description
The kinetic model of amotic cascade propagation in sandwich-type structures have been developed by the authors recently. Predictions of the model are being compared with the related experimental data. Concentration profile of Ni recoil implanted into silicon substrate at great dephs (x > 400 A) is well described by the model. Possible modifications of the model for shallow depths are being discussed
Additional details
Additional titles
- Original title (Russian)
- Изучение процессов внедрения атомов отдачи в полупроводниковую подложку
Publishing Information
- Journal Title
- Probl. Yad. Fiz. Kosm. Luchej
- Journal Issue
- no.19
- Series
- Probl. Yad. Fiz. Kosm. Luchej.
- CODEN
- PIFLD
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 17000402
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ARGON IONS; BACKSCATTERING; DEPTH; ION IMPLANTATION; KEV RANGE 100-1000; NICKEL ADDITIONS; QUANTITY RATIO; SILICON; SPATIAL DISTRIBUTION
- Descriptors DEC
- CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; SCATTERING; SEMIMETALS