Indigenous development of 128-strip silicon strip sensors using thin, six inch diameter silicon wafers

Position sensitive silicon sensors segmented into strips, microstrips, pads, etc., are being increasingly used for the precise measurement of energy and position of charged particles in nuclear and high energy physics experiments. The indigenous technology development for 128-strip silicon strip sensors with geometry of ~10 cm x 10 cm has been recently completed. The sensors were fabricated using six inch diameter wafers with a thickness of 300 µm. As the standard thickness of six inch wafers is 675 µm, fabrication on 300 µm thin wafers was very challenging. The fabricated sensors have very good uniformity, low leakage currents and high breakdown voltage exceeding 500 V. The details of the design of the sensors, fabrication process and static characteristics are presented in this paper. Indigenous technology for the fabrication of large area strip sensors on six inch size has been developed. The sensors uniformity with breakdown voltage exceeding 500 V. Further experiments wi to study the performance using charged particle beams. This is obtained by a calibration factor that depends on the different types of gamma camera, radionuclide and reconstruction settings. For accurate activity quantification in the patient study, it is necessary to convert the counts in the reconstructed images into the activity, which is done by using the appropriate calibration factor. The study aims to calculate and analyse the calibration factor (CF), at three time-points for the tomographic scans of two different SPECT/CTs, using a large cylindrical phantom with no inserts and filled with uniform activity in water. The detailed descriptions of the magnet and mechanical assembly for immersing the trap assembly could be found in the references of the article. Recently, we observed the signal of a trapped electron cloud for the first time at 4K and it will be described in this work