Published January 2006 | Version v1
Journal article

Gettering of Pd and Cu by nanocavities and dislocations in Si

  • 1. Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering, Australian National University, Canberra, ACT 0200 (Australia)

Description

Previous workers have assumed that the metallic precipitates observed in the regions where nanocavities are found were the result of the metal filling the nanocavities, either as bulk metal or as a silicide phase. Recent TEM observations have demonstrated that many of these precipitates appear to be concentrated along lattice dislocations, rather than randomly distributed as would be expected for precipitates formed by the filling of nanocavities. Consequently, the gettering contribution of dislocations in the lattice that are caused by nanocavity formation must be considered. In some cases, such as that of Pd, the dislocations are the preferred sites for the bulk precipitation of metals, rather than nanocavities. Our investigations compare the results of gettering by preformed nanocavities and dislocations for Pd and Cu in order to determine which structure is the dominant influence for the formation of bulk precipitates of these metals

Additional details

Identifiers

DOI
10.1016/j.nimb.2005.08.179;
PII
S0168-583X(05)01605-8;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
242
Journal Issue
1-2
Journal Page Range
p. 576-579
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
14. international conference on ion beam modification of materials
Dates
5-10 Sep 2004
Place
Pacific Grove, CA (United States)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37068519
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
COPPER; DISLOCATIONS; GETTERING; HYDROGEN; PALLADIUM; PRECIPITATION; SILICIDES; TRANSMISSION ELECTRON MICROSCOPY
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELECTRON MICROSCOPY; ELEMENTS; LINE DEFECTS; METALS; MICROSCOPY; NONMETALS; PLATINUM METALS; SEPARATION PROCESSES; SILICON COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.