A novel model for a planar wideband Marchand balun
Creators
- 1. School of Electrical and Information Engineering, Jiangsu University, Zhenjiang 212013 (China)
- 2. Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China)
Description
A new lumped element model for conventional Marchand baluns is presented. Analyzed by the even- and odd-mode method, the equivalent equations are derived for λ/4 coupled lines. Based on the proposed 5th-order lumped equivalent circuit for λ/4 coupled lines, the self-inductance, mutual inductive coupling and the capacitance can be calculated according to the even- and odd-mode characteristic impedance, therefore, the model parameters of the balun can be easily gained from the derived equations. To verify the model, a GaAs monolithic wideband Marchand balun was implemented and tested. The EM simulation and experimental results show a good agreement with the model simulation. This model is available in a wide frequency range and makes the design procedure of the Marchand balun faster and easier. (semiconductor integrated circuits)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/32/11/115010Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 32
- Journal Issue
- 11
- Journal Page Range
- [5 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43103728
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CAPACITANCE; COUPLING; EQUATIONS; EQUIVALENT CIRCUITS; GALLIUM ARSENIDES; IMPEDANCE; INDUCTANCE; INTEGRATED CIRCUITS; SEMICONDUCTOR MATERIALS; SIMULATION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; GALLIUM COMPOUNDS; MATERIALS; MICROELECTRONIC CIRCUITS; PHYSICAL PROPERTIES; PNICTIDES