Published November 1, 2011 | Version v1
Journal article

A novel model for a planar wideband Marchand balun

  • 1. School of Electrical and Information Engineering, Jiangsu University, Zhenjiang 212013 (China)
  • 2. Institute of RF- and OE-ICs, Southeast University, Nanjing 210096 (China)

Description

A new lumped element model for conventional Marchand baluns is presented. Analyzed by the even- and odd-mode method, the equivalent equations are derived for λ/4 coupled lines. Based on the proposed 5th-order lumped equivalent circuit for λ/4 coupled lines, the self-inductance, mutual inductive coupling and the capacitance can be calculated according to the even- and odd-mode characteristic impedance, therefore, the model parameters of the balun can be easily gained from the derived equations. To verify the model, a GaAs monolithic wideband Marchand balun was implemented and tested. The EM simulation and experimental results show a good agreement with the model simulation. This model is available in a wide frequency range and makes the design procedure of the Marchand balun faster and easier. (semiconductor integrated circuits)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/32/11/115010

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
32
Journal Issue
11
Journal Page Range
[5 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43103728
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CAPACITANCE; COUPLING; EQUATIONS; EQUIVALENT CIRCUITS; GALLIUM ARSENIDES; IMPEDANCE; INDUCTANCE; INTEGRATED CIRCUITS; SEMICONDUCTOR MATERIALS; SIMULATION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; ELECTRICAL PROPERTIES; ELECTRONIC CIRCUITS; GALLIUM COMPOUNDS; MATERIALS; MICROELECTRONIC CIRCUITS; PHYSICAL PROPERTIES; PNICTIDES