Published June 2007 | Version v1
Journal article

Exciton and antisite defect-related luminescence in Lu3Al5O12 and Y3Al5O12 garnets

  • 1. Laboratory of Optoelectronic Materials Ivan Franko National University of Lviv, 79017 Lviv (Ukraine)
  • 2. Physical Department Ivan Franko National University of Lviv, 79005 Lviv (Ukraine)
  • 3. Institute of Physics AS CR, 162 53 Prague (Czech Republic)
  • 4. Crytur Ltd, 51119 Turnov (Czech Republic)
  • 5. Physical Faculty, Moscow State University, 119899 Moscow (Russian Federation)

Description

Intrinsic emission of complex oxides with garnet structure was studied by means of the analyses of the time-resolved luminescence spectra and decay kinetic for single crystals (SC) and single-crystalline films (SCF) of Y3Al5O12 (YAG) and Lu3Al5O12 (LuAG) garnets under excitation by the pulse X-ray and synchrotron radiation at 8-300 K. YAG and LuAG SC and SCF are characterized by significantly different concentration of the YAl and LuAl antisite defects (AD) due to the substantial difference in the conditions of their crystallization. For this reason, LuAG and YAG SC and SCF are very useful model objects for the study of nature of the intrinsic emission of these oxides, consisting of the excitons and AD luminescence. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssb.200642431

Additional details

Identifiers

Publishing Information

Journal Title
Physica Status Solidi. B, Basic Research
Journal Volume
244
Journal Issue
6
Journal Page Range
p. 2180-2189
ISSN
0370-1972
CODEN
PSSBBD

Conference

Title
International workshop on nitride semiconductors 2006 (IWN 2006)
Dates
22-27 Oct 2006
Place
Kyoto (Japan)

Optional Information

Notes
With 8 figs., 1 tab., 25 refs.. SICI: 0370-1972(200706)244:6<2180::AID-PSSB200642431>3.0.TX;2-5