Published June 1, 2012 | Version v1
Journal article

Scanning tunneling microscope with long range lateral motion

  • 1. Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506-0055 (United States)

Description

We present our work on a recently built scanning tunneling microscope (STM), with coarse motion in two-dimensions. The tip of this STM can be translated a few millimeters in directions both parallel and perpendicular to the tip. This feature allows sampling of a larger area for experiments such as the study of how the electrical properties of charge density waves evolve between contacts, the proximity effect near a normal metal–superconducting interface, charge transport near the contact of a semiconductor interface, and for finding microscopically small samples like graphene. This STM is based on one of our previous one-dimensional designs. It utilizes orchestrated motion of six piezoelectric tubes in a slip–stick configuration in order to produce long range motion for the walker. This device is a single unit with a compact design making it very stable. It is stable enough to obtain atomic resolution on HOPG. It can operate in either a horizontal or vertical configuration and at cryogenic temperatures. It was designed entirely from non-magnetic materials for potential work in a magnetic field.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2012.01.047

Additional details

Identifiers

DOI
10.1016/j.physb.2012.01.047;
PII
S0921-4526(12)00052-X;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
407
Journal Issue
11
Journal Page Range
p. 1852-1854
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
International workshop on electronic crystals
Acronym
ECRYS-2011
Dates
15-27 Aug 2011
Place
Cargese (France)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43086458
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CHARGE DENSITY; CHARGE TRANSPORT; ELECTRICAL PROPERTIES; INTERFACES; MAGNETIC FIELDS; MAGNETIC MATERIALS; ONE-DIMENSIONAL CALCULATIONS; PIEZOELECTRICITY; PROXIMITY EFFECT; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR MATERIALS; TWO-DIMENSIONAL CALCULATIONS
Descriptors DEC
ELECTRICITY; MATERIALS; MICROSCOPY; PHYSICAL PROPERTIES

Optional Information

Copyright
Copyright (c) 2012 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.