Voltammetry of solid phases in study of semiconductor surface composition

Investigation results in definition of chemical composition of surface of the A3B5 type (InSb, InAs and CaAs) semiconductor compounds by the method of solid phase voltammetry are under consideration. The above method has been used in tWo variants: With an application of electroactive graphtite-pasted electrode and directly with an application of semiconductor plates as operating electrodes. Investigations With the use of InSb and InAs plates directly as a working electrode allow one to found out that thin (2-4nm) oxide layers occuring after chemicomechanical and chemical treatment represent combinations of In2O9, Sb2O3, Sb and In2O3, As2O3, As respectively. It is shown that voltammetry may serve as the technique for express control of surface mechanical and chemical treatment just before an application of semiconductor, dielectric, or metallic layers. It has been possible to decode composition of thick (approximately 100 nm) oxide films on indium antimonide and arsenide with the use of voltammetry of solid phases. It is noted that the method may be applied for the decoding of chemical composition of metal-semicondUctor transient regions