Structural changes in arsenic ion-implanted Hg1-xCdxTe epitaxial layers

Results of X-ray investigations of Hg1-xCdxTe (x=0.25) epitaxial layers after single and two-stage arsenic ion implantation with the energy E=100 keV are represented. It has been established that for doses D1=2 x 1014 ions/cm2 and D2=(2 x 1014+1015) ions/cm2 the Frenkel pair (anion vacancy+interstitial mercury atom) generation is the most probable process. The model of a possible system of structural defects in the near-surface layers of ion-implanted structures Hg1-xCdxTe is proposed. The model allows for the presence of certain dimensions and concentrations of both growth and new defects - the Frenkel pairs, cluster formations and dislocation loops formed under ion radiation. The calculated deformation profiles are complex in shape with characteristic peaks at the depth of maximum nuclear power ion loss. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)