Published October 1992 | Version v1
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The additional contribution caused by Coulomb interaction to the exciton dispersion in multiple quantum wells and superlattices for direct band gap cubic semiconductors

Creators

  • 1. International Centre for Theoretical Physics, Trieste (Italy)
  • 2. Hue Univ., Hue (Viet Nam). Dept. of Physics

Description

The exciton dispersion in multiple quantum wells and superlattices is studied for direct band gap cubic semiconductors in the three-band-model. The Coulomb interaction between the light and heavy exciton states in different wells is calculated. This leads to a direction dependence and split of the exciton dispersion. (author). 21 refs

Availability note (English)

MF available from INIS under the Report Number.

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Additional details

Publishing Information

Imprint Pagination
6 p.
Report number
IC--92/318

INIS

Country of Publication
International Atomic Energy Agency (IAEA)
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
24009136
Subject category
S74: ATOMIC AND MOLECULAR PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
BAND THEORY; COULOMB FIELD; EXCITONS; SEMICONDUCTOR MATERIALS; SUPERLATTICES
Descriptors DEC
ELECTRIC FIELDS; MATERIALS; QUASI PARTICLES