Published February 9, 2009 | Version v1
Journal article

Electrical properties of epitaxial SrTiO3 tunnel barriers on (001) Pt/SrTiO3 substrates

  • 1. Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

Description

Coherent, epitaxial Pt films with root-mean-square surface roughness values of less than one unit cell were grown on (001) SrTiO3 substrates by dc sputtering. These Pt films served as bottom electrodes for epitaxial SrTiO3 tunnel barriers grown by rf magnetron sputtering. The SrTiO3 barriers were free of pinholes and showed mean surface roughness values of less than one unit cell. Barriers with a thickness of 4.5 nm showed excellent insulating properties and nonlinear current-voltage characteristics. At high bias fields, a reproducible hysteresis and deviation from the ideal tunneling behavior were observed

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
94
Journal Issue
6
Journal Page Range
p. 062903-062903.3
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2009 American Institute of Physics