Published July 2005 | Version v1
Miscellaneous

NEA-photocathode with high brightness performance

  • 1. Japan Atomic Energy Research Institute, Advanced Photon Research Center, Tokai, Ibaraki (Japan)
  • 2. Nagoya University, Department of Materials Science and Engineering, Nagoya, Aichi (Japan)

Description

An NEA-GaAs photocathode is expected as a high-brightness electron source satisfying the requirements of ERL-injectors. Although GaAs superlattice has been studied for polarized electron sources, the superlattice has never been applied to an ERL injector, which is usually equipped with GaAs in bulk. We propose GaAs superlattice as a photocathode for an ERL injector. The superlattice has larger NEA and larger joint density of state around band gap than bulk GaAs. These properties of GaAs superlattice will contribute to higher quantum efficiency and smaller emittance far beyond bulk GaAs. We present theoretical consideration based on a band gap model of the GaAs superlattice, and a future plan to develop the superlattice photocathode. (author)

Part of:
The 2nd annual meeting of Particle Accelerator Society of Japan and the 30th Linear Accelerator Meeting in Japan

Additional details

Publishing Information

Imprint Title
The 2nd annual meeting of Particle Accelerator Society of Japan and the 30th Linear Accelerator Meeting in Japan
Imprint Pagination
819 p.
Journal Page Range
p. 49-51

Conference

Title
2. annual meeting of Particle Accelerator Society of Japan and 30. Linear Accelerator Meeting in Japan
Dates
20-22 Jul 2005
Place
Tosu, Saga (Japan)

Optional Information

Notes
13 refs., 3 figs.