Innovative solution to avoid glass substrate bending in a chalcopyrite solar cell fabrication process
- 1. Institute of Electronics, Microelectronics and Nanotechnology, UMR 8520, Lille 1 University, Avenue Poincaré, CS 60069, 59652, Villeneuve d'Ascq cedex (France)
- 2. CROSSLUX, Avenue Georges Vacher, ZI Rousset Peynier, Immeuble CCE, 13106, Rousset (France)
Description
Highlights: • The phenomenon of glass substrate bending after a thermal process has been explained. • A reactive sputtering process was developed for substrate bending management. • A bilayer structure was proposed for a precise control of the substrate flatness. - Abstract: Considering the chalcopyrite solar cell fabrication process, the commonly reported substrate bending effect that is observed after thermal process, in a front side halogen lamp-based annealing configuration (Rapid Thermal Annealing –RTA- equipment), has been investigated. We first proposed a simple model explaining the substrate bending shape dependence on the initial stress state within the molybdenum (Mo) layer (free, tensile or compressive). Then, we showed that it is possible to overcome this issue by simply using a reactive (oxygen based) sputtering process for the deposition of the Mo layer. Finally, we showed that using a bilayer structure Mo(O)/Mo allows a more precise control of the flatness of the annealed samples. To understand the mechanisms governing such changes in substrate bending, structural and morphological material changes as a function of oxygen flow have been investigated by using X-ray diffraction and scanning electron microscope imaging, respectively. The elemental distribution throughout the Mo(O)/Mo bilayer structure thickness was also investigated.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2018.03.043Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2018.03.043;
- PII
- S0040609018301871;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 653
- Journal Page Range
- p. 194-199
- ISSN
- 0040-6090
- CODEN
- THSFAP
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 50035457
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CHALCOPYRITE; DEPOSITION; DISTRIBUTION; GLASS; LAYERS; MOLYBDENUM; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; SPUTTERING; STRESSES; SUBSTRATES; THICKNESS; THIN FILMS; X-RAY DIFFRACTION
- Descriptors DEC
- COHERENT SCATTERING; DIFFRACTION; DIMENSIONS; DIRECT ENERGY CONVERTERS; ELECTRON MICROSCOPY; ELEMENTS; EQUIPMENT; FILMS; HEAT TREATMENTS; METALS; MICROSCOPY; MINERALS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; REFRACTORY METALS; SCATTERING; SOLAR EQUIPMENT; SULFIDE MINERALS; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.