Three-dimensional profile measurement of micro-electro-mechanical systems structures based on infrared light reflection interference
Creators
- 1. School of Physics and Electronic Science, Shanxi Datong University, Shanxi 037009 (China)
- 2. Department of Physics, Taiyuan Normal University, Shanxi 030619 (China)
Description
A new method of measuring the three-dimensional (3D) profile of micro-electro-mechanical systems (MEMS) structures based on infrared light reflection interference is developed in this paper. The application of reflection interference technology in a 3D profile reconstruction is extended from white light to infrared light. The measurement system comprised an infrared light source, an interference microscope, an infrared light charge-coupled device, a ceramic piezo and a data acquisition system. The 3D profile of the MEMS device structures was obtained by vertical scanning interferometry and it is consistent with the scanning electron microscope image. The results indicate that the lateral resolution is 0.18 um and the vertical resolution is 1 nm. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1555-6611/aa786dAdditional details
Identifiers
Publishing Information
- Journal Title
- Laser Physics (Online)
- Journal Volume
- 27
- Journal Issue
- 11
- Journal Page Range
- [4 p.]
- ISSN
- 1555-6611
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49083562
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CERAMICS; CHARGE-COUPLED DEVICES; DATA ACQUISITION SYSTEMS; INFRARED RADIATION; INTERFERENCE; INTERFEROMETRY; MEMS; REFLECTION; RESOLUTION; SCANNING ELECTRON MICROSCOPY; THREE-DIMENSIONAL CALCULATIONS; VISIBLE RADIATION
- Descriptors DEC
- ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; MICROSCOPY; RADIATIONS; SEMICONDUCTOR DEVICES