Published 1981
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Saturation, exchange and retention of implanted D/H ions in fused silica
Description
Elastic recoil detection techniques have been used to measure hydrogen isotope profiles in fused silica implanted with 20 keV H and/or D ions. Saturation is obtained for both H and D implantations at a concentration of 2.2 x 1021 ions/cm3. H and D exchanges are observed for saturated samples subsequently implanted with a different H isotope. A previously developed local mixing model of H-trapping has been extended to include retrapping and beam-induced detrapping for application to these studies. This theoretical analysis provides a good fit to the H/D saturation and isotope exchange behavior. Isochronal annealing shows that both H and D are released in a single stage centered about 5500C
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS., PC A02/MF A01.
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Additional details
Publishing Information
- Imprint Pagination
- 8 p.
- Report number
- SAND--81-2485C
Conference
- Title
- Annual meeting of the Materials Research Society.
- Dates
- 16 - 19 Nov 1981.
- Place
- Boston, MA, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 13662844
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- DEUTERONS; HIGH TEMPERATURE; ION IMPLANTATION; ISOTOPIC EXCHANGE; SILICON OXIDES; TOKAMAK DEVICES; TRAPPING; TRITONS
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CLOSED PLASMA DEVICES; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; THERMONUCLEAR DEVICES
Optional Information
- Secondary number(s)
- CONF-811122--22.