Published 1981 | Version v1
Report Restricted

Saturation, exchange and retention of implanted D/H ions in fused silica

Description

Elastic recoil detection techniques have been used to measure hydrogen isotope profiles in fused silica implanted with 20 keV H and/or D ions. Saturation is obtained for both H and D implantations at a concentration of 2.2 x 1021 ions/cm3. H and D exchanges are observed for saturated samples subsequently implanted with a different H isotope. A previously developed local mixing model of H-trapping has been extended to include retrapping and beam-induced detrapping for application to these studies. This theoretical analysis provides a good fit to the H/D saturation and isotope exchange behavior. Isochronal annealing shows that both H and D are released in a single stage centered about 5500C

Availability note (English)

MF available from INIS under the Report Number; Available from NTIS., PC A02/MF A01.

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Additional details

Publishing Information

Imprint Pagination
8 p.
Report number
SAND--81-2485C

Conference

Title
Annual meeting of the Materials Research Society.
Dates
16 - 19 Nov 1981.
Place
Boston, MA, USA.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
13662844
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
DEUTERONS; HIGH TEMPERATURE; ION IMPLANTATION; ISOTOPIC EXCHANGE; SILICON OXIDES; TOKAMAK DEVICES; TRAPPING; TRITONS
Descriptors DEC
CHALCOGENIDES; CHARGED PARTICLES; CLOSED PLASMA DEVICES; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; THERMONUCLEAR DEVICES

Optional Information

Secondary number(s)
CONF-811122--22.