Published 1994 | Version v1
Report Open

Estimating low-dose rate irradiation response of MOSFETs

Creators

  • 1. Arizona Univ., Tucson, AZ (United States). Dept. of Electrical and Computer Engineering
  • 2. Sandia National Labs., Albuquerque, NM (United States)
  • 3. Alcatel Espace, Toulouse (France)

Description

A simple method to estimate the threshold-voltage shift in MOSFETs due to low-dose-rate ionizing irradiation based on MIL-STD-883D Method 1019.4 is demonstrated. The realm of applicability of this approach is explored

Availability note (English)

MF available from INIS under the Report Number; Also available from OSTI as DE94007292; NTIS; US Govt. Printing Office Dep.

Files

25056213.pdf

Files (397.8 kB)

Name Size Download all
md5:dc5625d574d5671326124dee054e2ab9
397.8 kB Preview Download

Additional details

Publishing Information

Imprint Pagination
5 p.
Report number
SAND--94-0457C

Conference

Title
31. annual international nuclear and space radiation effects conference.
Dates
18-22 Jul 1994.
Place
Tucson, AZ (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
25056213
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S42: ENGINEERING;
Resource subtype / Literary indicator
Conference
Descriptors DEI
GAMMA RADIATION; MOSFET; PHYSICAL RADIATION EFFECTS
Descriptors DEC
ELECTROMAGNETIC RADIATION; FIELD EFFECT TRANSISTORS; IONIZING RADIATIONS; MOS TRANSISTORS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Contract/Grant/Project number
Contract AC04-94AL85000; Contract DNA 001-92-C-002 Contract 393-550-986
Funding organization
USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States).
Secondary number(s)
CONF-940726--3.