Published April 4, 2007
| Version v1
Journal article
Enhanced field emission from injector-like ZnO nanostructures with minimized screening effect
Creators
- 1. School of Electronic Science and Engineering, Southeast University, Nanjing 210096 (China)
- 2. School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, 639798 (Singapore)
- 3. Institute of Microelectronics (IME), 11 Science Park Road, Singapore Science Park II, 117685, Singapore (Singapore)
Description
Injector-like zinc oxide (ZnO) nanostructures have been synthesized on Si substrate by the vapour phase transport method. Samples with different areal densities were obtained by controlling the temperature. The field emission properties of the injector-like ZnO nanostructures showed a clear dependence on the areal density of the nanostructures, which is due to the screening effect. The samples with a needle length of 850 nm and an areal density of 1 x 108 cm-2 showed the lowest field emission turn-on field of 1.85 V μm-1 at a current density of 10 μA cm-2, and the current density reaches 1 mA cm-2 at an applied field of 4.7 V μm-1
Additional details
Identifiers
- DOI
- 10.1088/0957-4484/18/13/135604;
- PII
- S0957-4484(07)42161-4;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 18
- Journal Issue
- 13
- Journal Page Range
- p. 135604
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38083695
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CURRENT DENSITY; DENSITY; FIELD EMISSION; NANOSTRUCTURES; SILICON; SUBSTRATES; VAPORS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; EMISSION; FLUIDS; GASES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; ZINC COMPOUNDS