Published November 2011 | Version v1
Journal article

Epitaxial growth of atomically flat gadolinia-doped ceria thin films by pulsed laser deposition

  • 1. Technical University of Denmark, Fuel Cells and Solid State Chemistry Division, Risoe National Laboratory for Sustainable Energy, Roskilde (Denmark)
  • 2. Technical University of Denmark, Department of Photonics Engineering, Roskilde (Denmark)

Description

Epitaxial growth of Ce0.8Gd0.2O2(CGO) films on (001) TiO2-terminated SrTiO3 substrates by pulsed laser deposition was investigated using in situ reflective high energy electron diffraction. The initial film growth shows a Stransky-Krastanov growth mode. However, this three-dimensional island formation is replaced by a two-dimensional island nucleation during further deposition, which results in atomically smooth CGO films. The obtained high-quality CGO films may be attractive for the electrolyte of solid-oxide fuel cells operating at low temperature. (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1007/s00339-011-6532-8

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics. A, Materials Science and Processing
Journal Volume
105
Journal Issue
3
Series
Special issue: Matrix assisted pulsed laser evaporation: Fundamentals and applications
Journal Page Range
p. 697-701
ISSN
0947-8396
CODEN
APAMFC