DLTS of low-energy hydrogen ion implanted n-Si

We have used deep level transient spectroscopy and capacitance-voltage measurements to study the influence of low-energy hydrogen ion implantation on the creation of defects in n-Si. In particular, we have studied the ion fluence dependence of the free carrier compensation at room temperature, and we have measured the generation of VO-H complex and VP-pair in ion implanted samples. The 7.5 keV H ions created defects in the top 0.3 μm of samples, which resulted in carrier compensation to depths exceeding 1 μm. This effect is not due to defects created by ion channeling but is rather due to the migration of defects as demonstrated using binary collision code MARLOWE