Influence of intensive external impacts on structure and properties of metals and semiconductors

Study of atomic structure of nanocrystalline metal faulted structure using method of field ionic microscopy revealed for the first time formation of subgrains and different structure of their boundary region at intensive external impact. Nature of their crystal structure depends essentially on intensive external action type and determines physicomechanical properties of investigated metals. Photoluminescence current increase at annealing of nano dimensional semiconductors under pressure is, apparently, caused by induction of light-emitting recombination center formation in metastable areas of implanted oxynitride layers. Nature of these centers probably relates to Si-Si centers and complexes, catching Ge atoms (for example, Si-Ge or Ge-Ge centers)