Published September 1, 2007
| Version v1
Journal article
Monolithic integration of detectors and transistors on high-resistivity silicon
Creators
- 1. INFN, Sezione di Padova (Gruppo Collegato Trento), and Universita di Trento, Via Sommarive 14, 38050 Povo (Trento) (Italy)
- 2. INFN, Sezione di Pisa, and Universita di Pisa, Largo B. Pontecorvo 3, 56127 Pisa (Italy)
- 3. ITC-irst, Divisione Microsistemi, Via Sommarive 18, 38050 Povo (Trento) (Italy)
- 4. INFN, Sezione di Trieste, and Universita di Trieste, Via A. Valerio 2, 34127 Trieste (Italy)
- 5. INFN, Sezione di Pavia, and Universita di Pavia, Via Ferrata 1, 27100 Pavia (Italy)
- 6. INFN, Sezione di Padova (Gruppo Collegato Trento), and Universita di Modena e Reggio Emilia, Via Vignolese 905, 42100 Modena (Italy)
Description
We report on the most recent results from an R and D activity aimed at the development of silicon radiation detectors with embedded front-end electronics. The key features of the fabrication technology and the available active devices are described. Selected results from the characterization of transistors and test structures are presented and discussed, and the considered application fields are addressed
Availability note (English)
Available from http://dx.doi.org/10.1016/j.nima.2007.05.260Additional details
Identifiers
- DOI
- 10.1016/j.nima.2007.05.260;
- PII
- S0168-9002(07)01157-6;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 579
- Journal Issue
- 2
- Journal Page Range
- p. 658-663
- ISSN
- 0168-9002
- CODEN
- NIMAER
Conference
- Title
- 6. 'Hiroshima' symposium on the development and application of semiconductor detectors
- Dates
- 11-15 Sep 2006
- Place
- Carmel, CA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39060961
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- EQUIPMENT; FABRICATION; FIELD EFFECT TRANSISTORS; JUNCTION TRANSISTORS; SI SEMICONDUCTOR DETECTORS; SILICON
- Descriptors DEC
- ELEMENTS; MEASURING INSTRUMENTS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.