Published November 1, 2019 | Version v1
Journal article Metadata-only

Thin amorphous silicon films crystallization upon flexible substrates

Creators

  • 1. Saratov State University, Saratov, 83 Astrakhanskaya st., 410012 (Russian Federation)
  • 2. Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Fryazino Branch, Fryazino 141190, Moscow Oblast (Russian Federation)
  • 3. Ioffe Physical Technical Institute, 26 Politekhnicheskaya st., St. Petersburg, 194021 (Russian Federation)

Description

A novel method for thin silicon films crystallization that combines advantages of laser- and metal-induced crystallization technologies is reported. Polycrystalline silicon films were synthesized on flexible polyimide substrates following the proposed approach. Films obtained possess high crystal structure regularity and crystallinity. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1400/5/055034

Additional details

Identifiers

DOI
10.1088/1742-6596/1400/5/055034;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1400
Journal Issue
5
Journal Page Range
[5 p.]
ISSN
1742-6596

Conference

Title
International Conference PhysicA.SPb/2019
Dates
22-24 Oct 2019
Place
Saint Petersburg (Russian Federation)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53072696
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CRYSTAL STRUCTURE; CRYSTALLIZATION; LASERS; METALS; POLYCRYSTALS; SILICON; SUBSTRATES; THIN FILMS
Descriptors DEC
CRYSTALS; ELEMENTS; FILMS; PHASE TRANSFORMATIONS; SEMIMETALS