Published August 1, 1985 | Version v1
Journal article Metadata-only

Free carrier absorption in n-type indium selenide

Creators

  • 1. Departamento de Electricidad y Magnetismo, Facultad de Ciencias Fisicas, Burjasot (Spain)
  • 2. Laboratoire de Physique des Milieux Tres Condenses, Paris (France)

Description

Infrared absorption of n-type indium selenide is studied in the 2.5 to 50 μm spectral range at 300 K. Lattice absorption peaks are observed between 25 and 50 μm. Tin-doped samples with an electron concentration higher than 1016 cm-3 exhibit free carrier absorption for lambda larger than 10 μm. The experimental results are interpreted by the quantum theory of free carrier absorption. Quantitative account of absorption coefficient is given by introducing homopolar optic phonon and ionized impurity scattering. (author)

Additional details

Publishing Information

Journal Title
Phys. Status Solidi B
Journal Volume
130
Journal Issue
2
Series
Phys. Status Solidi B.
Journal Page Range
793-799
ISSN
0370-1972
CODEN
PSSBB

INIS

Country of Publication
Germany
Country of Input or Organization
German Democratic Republic
INIS RN
17012170
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ABSORPTION; CARRIER DENSITY; CARRIER MOBILITY; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; HALL EFFECT; IMPURITIES; INDIUM SELENIDES; INFRARED SPECTRA; N-TYPE CONDUCTORS; PHONONS; TIN COMPOUNDS; TRANSMISSION
Descriptors DEC
CHALCOGENIDES; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; MATERIALS; MOBILITY; PHYSICAL PROPERTIES; QUASI PARTICLES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; SPECTRA